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Inkqubela phambili yamva nje kunye nemiceli mngeni yeeseramikhi zeAlON ezingafihliyo

2023-05-10

I-Ceramics kunye nee-composites zazo ziye zaphandwa ngokubanzi kwizicelo ezahlukeneyo ngenxa yeekhemikhali zazo ezizodwa kunye neempawu ze-physics [1-7]. Phakathi kwazo, ii-ceramics ezicacileyo zinesicelo esibanzi kwi-domain yeshishini kunye namashishini omkhosi ngenxa yeempawu zabo ezibalaseleyo, ezibonakalayo, kunye nezomatshini [8-10]. Phakathi kweeseramics ezicacileyo, iiseramikhi ze-aluminium oxynitride (AlON) ezicacileyo zithathwa njengenye yezona zinto zibalulekileyo kwi-domes, iifestile ze-infrared kunye nezibonakalayo, kunye nezikrweqe ezicacileyo, njl njl [11−13]. Xa kuthelekiswa nesafire yekristale enye, eyaziwa ngokuba yi-ceramics ecacileyo enzima kakhulu, i-polycrystalline AlON ceramics ineempawu ezifanayo kumandla, ukuqina, kunye neempawu ezibonakalayo, kodwa zinika ukuguquguquka ngakumbi ngobukhulu kunye nokuma [14,15]. Ngoko ke, ii-ceramics ze-AlON ziye zatsala uphando olukhulayo. I-γ-AlON isisombululo esiqinileyo se-Al₂O₃ kunye ne-AlN [16,17]. Iindlela ezininzi ziye zaphononongwa ukulungiselela i-AlON powder okanye i-AlON ceramics, njenge-solid-state reaction [18], indlela ye-carbonization ye-Al₂O₃ [19,20], i-chemical vapor deposition [21], indlela ye-sol-gel [22,23], kunye nesisombululo sokutshisa i-synthesis [24]. I-gap yebhendi ye-AlON ilinganiswe ukuba yi-6.2 eV [25]. I-TU et al [26] iqeshe ithiyori ye-first-principles density functional (DFT) ukufunda ukukhethwa kwendawo ye-Al vacancy kunye ne-Natoms e-γ-AlON. I-gap yebhendi kunye ne-bulk modulus imodeli yesakhiwo se-γ-AlON, njengoko isakhiwo sendawo ye-Al₂₃O₂₇N₅ kubalwe ukuba yi-3.99 eV ye-athomu ye-N kunye nezithuba ze-Al kwi-γ-AlON ayikho kunye ne-200.9 GPa, ngokulandelanayo. Inikwe ibhanti ebanzi ecacileyo. Iipropati ze-γ-AlON ziboniswa kwi-gap kunye ne-photon ephantsi yamandla kunye neThebhile ephezulu ye-1 [14].

Ukuzinza kwexesha, i-AlON ceramic ihlolwe njenge-matrix ye-phosphor. Njenge-upconversion photo- luminescence (UCPL) phosphor, iAlON inokufakwa izinto ezahlukeneyo zomhlaba ezinqabileyo, ezifana ne-Eu₂+ [27], Yb₃+[28], Tm₃+ [29], kunye ne-Ce₃+ [30]. Kutshanje, iiglasi ezisekelwe kwixabiso eliphantsi le-AlON elidityaniswe ne-4-dimethyl-amino-N-methyl-4- stilbazoliumtosylate (DAST) umaleko [31] kunye nefilimu encinci ye-VO₂ kwi-AlON esobala [32] ifunyenwe usetyenziso olunokubakho kwiifestile ezikrelekrele. I-ALON(5)−DAST(90)−ALON(5) igqwesa iiglasi zefestile zorhwebo ezikumgangatho weshishini kunye neentetha zexabiso eliphantsi, elikhaphukhaphu, nelingqongqo [31]. Ngaphaya koko, i-Ti6Al4V yalungiswa ngempumelelo kwi-AlON ceramic ngokusebenzisa indlela esebenzayo yokuqhafaza, kwaye i-composite ibonise iimpawu ezibalaseleyo zoomatshini [33]. Kufuneka kuqatshelwe ukuba izongezo ezintsha ze-sintering ze-H₃BO₃ [34] kunye nezinto zomhlaba (Sc, La, Pr, Sm, Gd, Dy, Er, kunye ne-Yb) [35] zahluke kwi-Y₂O₃, i-La₂O₃, kunye ne-MgO eqhelekileyo. Nangona iindlela eziphuculweyo, izongezo ezitsha ze-sintering, izinto ezintsonkothileyo zomhlaba idoping kunye nesicelo esitsha esiphononongwayo, njl njl, ziye zaphuhliswa ngokubanzi, isishwankathelo esicwangcisiweyo, esijoliswe kuyo kunye nesihlaziyiweyo sisasilela [11,13,36,37]. Ngapha koko, ezinye iingxaki ezingasonjululwanga kunye nemingeni emitsha yeekeramics ze-AlON zithintela ukunyuswa kwentengiso kunye nokusetyenziswa kwazo. Ke ngoko, eli nqaku lithatha uphononongo lwamva nje nolubalulekileyo lweekeramics ze-AlON ezicacileyo ngokweendlela zokulungiselela, izongezo ze-sintering, itekhnoloji ye-sintering, imingeni kunye namathemba ophuhliso.


UMZEKELO 1

  UMZEKELO 1

    

                  Itheyibhile yoku-1 yeePropati ze-γ-AlON [14]                          

ye parameterixabiso
Ubuninzi/(g·cm−3 )3.71
Ileyithi iparamitha/Å7.947
Indawo yokunyibilika/°C2140
Imodyuli yolutsha/GPa323.6
Shear modulus/GPa130.4
Ubunzima obuncinci/GPa19.5
Poisson ratio, μ0.24
Amandla okugoba/MPa300.1 ± 34.5
Ukwandiswa kweThermal/°C−17.8×10−6
I-Thermal conductivity/(W·m−1 ·K−1 )12.6
Isalathiso esisuka kwi-refractive (Λ=4.0 μm)/%1.66
Ukuqina kokwaphuka/(MPa · m1/2)2.0

I-AlON inesakhiwo se-cubic spinel kunye neqela lesithuba se-Fd3m [38,39]. Njengoko kubonisiwe kwiSazobe soku-1 [40], ii-athom ze-N kunye ne-O zikwindawo ye-32e, kwaye ii-athomu ze-Al zifumaneka kwiindawo ze-16d kunye ne-8a. Ngokusekelwe kwiziphumo zovavanyo kunye nethiyori

Kwi-1964, umzobo wesigaba sokuqala se-binaryAl₂O₃−Ukwakheka kweAlN kwapapashwa nguLEJUS [43]. Emva koko, i-MCCAULEY et al [44,45] ichaze umzobo wesigaba esipheleleyo sokulingana kwe-pseudo-binary Al₂O₃−AlN ukubunjwa phantsi kwe-nitrogen ehambayo kwi-1.013 × 105 Pa, njengoko kuboniswe kwi-Fig. 2 [44]. Ngaphandle kokuzimisela kovavanyo, izibalo, imodeli ye-anion eqhubekayo ye-AlON inokuchazwa ngefomula Al(64+x)/3V(8−x)/3O32−xNx, apho 2≤x≤5 [39−42]. Nangona kunjalo, kunzima ukuqinisekisa ingqiqo abanye abaphandi baye bazama ukubala ummandla wokuzinza kwe-AlON kunye ne-pseudo-binary Al₂O₃-AlN inkqubo esekelwe kwidatha yovavanyo kunye nedatha ekhoyo ye-thermodynamic yomzobo wesigaba sokulinganisa [36,46-49] . Nangona kunjalo, ulwahlulo lwesigaba olwenzekayo kwiimvavanyo alukakwazi ukuguqulwa ngenxa yolwazi oluncinci lovavanyo. 

UMZEKELO 2

UMZEKELO 2

Kuyaziwa kakuhle ukuba iiseramics zibonisa iinkozo, imida yeenkozo, kunye ne-porosity, njl (umzobo 3).)[50,51]. Njengoko bekutshiwo ngaphambili, ii-ceramics ze-AlON zine-isotropic cubic lattice structure, esesinye sezizathu ezibalulekileyo zokuba zinokubonakala elubala. Phakathi kwemithombo yokukhanya okukhanyayo, i-porosity iyona nto ibaluleke kakhulu ukucacisa ukuba i-ceramics ingaba sobala okanye ayikho. Ukunciphisa i-porosity kufuneka ibe mkhulu kune-99.9% yoxinaniso lwethiyori, kwaye ubungakanani beepores kwimida yeenkozo kufuneka bube buncinci kunobude bokukhanya okanye bungabikho. Imida yezityalo eziziinkozo bubukho obungathintelekiyo kwiiseramikhi kwaye inempembelelo ebonakalayo elubala. Ke, imida yeenkozo ezinomgangatho ophezulu kunye neenkozo ezinobungakanani obuncinci kunye nobukhulu obufanayo kulindeleke ukuba zifumane ii-ceramics ze-AlON ezingafihliyo. Ukusebenzisa izongezo ze-sintering ngokuqhelekileyo kunokuphelisa ii-pores ezishiyekileyo ngexesha lokutshiza, kodwa kuya kuvelisa amaziko amatsha okusasaza ukukhanya kwi-ceramics, isigaba sesibini, kunye ne-inclusions. Njengemithombo emibini ebalulekileyo yokusabalalisa ukukhanya, i-porosity kunye nemida yeenkozo kufuneka iyancipha kangangoko kunokwenzeka. U-SHAHBAZI et al [51] uchaze i-ceramics ecacileyo, iiparamitha ezisebenzayo kwi-transparency, i-Mie theory, kunye ne-Fraunhofer theory ngokweenkcukacha.

Umzobo3

UMZEKELO 3 

Ukuza kuthi ga ngoku, iindlela ezininzi ziye zaxelwa ukulungiselela amandla e-AlON okanye i-AlON ceramics, njenge-solid-state reaction [18,52-55], indlela ye-carbonization esuka kwi-Al₂O₃ [19,56-61], i-chemical vapor deposition [21,62] ], kunye nendlela ye-sol−gel [22,63]. Uninzi lwezifundo zijolise kwi-solid-state reaction ye-Al₂O₃ kunye ne-AlN kwiqondo lokushisa eliphezulu kunye nendlela ye-carbonization yokunciphisa i-Al₂O₃.

Indlela ye-slid-state yindlela elula kwaye eqhelekileyo yokulungiswa kwezinto ezininzi. Enye yezona zinto ziluncedo kakhulu zokusabela kwe-slid-state kubushushu obuphezulu kukuba imathiriyeli ekrwada inokufunyanwa ngaphandle komgudu. Ukusabela kwe-Al₂O₃ kunye ne-AlN yokwenziwa kwe-AlON inokuchazwa njenge-5AlN + 9Al₂O₃→ Al₂₃O₂₇N₅[13,64]. Amandla acocekileyo e-Al₂O₃ kunye ne-AlN ayafumaneka kwimarike kwaye anokusetyenziswa ngokuthe ngqo ukwenza amandla e-AlON okanye ii-ceramics ze-AlON eziguquguqukayo. Ukulungiswa kwenyathelo elinye leekeramics ze-AlON akunakunciphisa kuphela ixabiso le-sintering kodwa kunye nokwenza lula inkqubo ye-sintering kunye nokufezekisa ngokulula imveliso enkulu. Nangona kunjalo, iipowders zinokudityaniswa okanye zixutywe ngokungafaniyo, okukhokelela ekuhleni okungalunganga kwee-AlON ceramics. Ngeli xesha, i-ultrafine ephezulu ye-AlN iyabiza, eyonyusa iindleko zokwenziwa. Njengoko kubonisiwe kwiFig. I-4 (a), i-MCCAULEY kunye ne-ORBIN [52] okokuqala ilungiselele i-AlON disc eguquguqukayo kwaye ibonise umzobo wesigaba sokushisa okuphezulu kwe-AlON kunye ne-pseudordinary Al₂O₃−AlN yokuhlanganiswa kokuhlanganiswa. Inkqubo ye-sintering ye-liquid-phase sintering yaqeshwa ukuvelisa ii-ceramics ze-AlON ezicacileyo ngu-PATEL et al [65]. I-α- Al₂O₃ kuluhlu lwe-27−30 mol.% yaxutywa okokuqala ne-AlN. Emva koko, umxube wacinezelwa kwiipellets emva kokugaya ibhola. Iipellets zatshizwa ngo-1950−2025 °C i-10−60 min, kwaye inxalenye yemathiriyeli inokwenza isigaba solwelo ukukhuthaza ukuntywila kwesi sigaba. Okulandelayo, iqondo lobushushu lenkqubo lehle nge-50−100 °C kwaye lagcinwa enye i-8−20 h ukuphucula ngakumbi ukuxinana kunye nokungafihli. I-CHEN et al [66] iqale yadibanisa inqanaba le-AlON esulungekileyo: amandla e-Ce3+ kwi-1780 °C kwi-nitrogen, emva koko i-AlON: i-Ce3+ iiseramics ezishinyeneyo zaphunyezwa ngolwelo-inqanaba loncedo lokuxinzelela ngaphandle koxinzelelo kwi-1900 °C kangangeyure ezingama-20. (Amakhiwane. 4(a) kunye (b)). Ngaphandle kokudityaniswa ngokuthe ngqo kwendlela esetyenzisiweyo yokulungisa umgubo weAlON kwaye emva koko i-AlON igubungele iiseramics ngumbuso oqinileyo oqeshwe ukuvelisa iiseramikhi ze-AlON. Eyona ndlela iphambili, i-LI et al [67] esetyenzisiweyo i-Al₂O₃ kunye ne-AlN powders inzuzo yale ndlela ikwixabiso eliphantsi lezinto ezikrwada ukudibanisa ngokukhawuleza imathiriyeli ekrwada yesigaba esinye kunye nokuba nokwenzeka kwamagunya e-AlON yeshishini kuqala ngokusebenzisa ilizwe eliqinileyo. indlela. Emva koko, imveliso. Nangona kunjalo, iimeko ze-sintering ziyi-AlON powders ezilungisiweyo zagatywa zibe yinkimbinkimbi, kwaye kunzima ukulawula ngokuchanekileyo i-mole ye-AlON powders, njengoko kuboniswe kwiiFig. 4(d) kunye (e). Umlinganiselo we-Al₂O₃ ukuya ku-C, kunye ne-AlON ibonakala ngokulula I-AlON ceramic yaveliswa ngokubola kwi-Al₂O₃ kunye ne-AlN kwi-N2pressureless sintering efunyenwe umoya we-AlON kwiqondo lokushisa eliphezulu. Zonke ezi powders, kunye ne-in-line transmittance ye-AlON inokubangela i-AlON powders engcolileyo. I-ceramic yayiphezulu njenge-84.3% (d100 mm × 1 mm) e-JIN et al [68] okokuqala yenza i-Al₂O₃ / 3.7 μm (Amakhiwane. 4(f) kunye (g)).

Umzobo4

UMZEKELO 4 

Ukunciphisa i-carbothermal kunye ne-nitridation carbothermal nitridation umxube, njengoko kubonisiwe kwiMifanekiso. 5(a−c). Ngethuba lenkqubo, i-carbon layer (CRN) indlela yokuqala isetyenziselwa ukuvelisa kwi-Al₂O₃ i-particle surface yafunyanwa ngamandla i-AlON yi-YAMAGUCHI kunye nokunciphisa ukubambisana kunye nokukhula kwe-Al₂O₃ YANAGIDA kwi-1959 [39]. I-CRN yeyona nto ininzi. Ekugqibeleni, ii-ceramics ze-AlON ezingafihliyo ezinobuninzi be-in-line transmittance ngaphezu kwe-80% kwi-2000 nm inokufezekiswa ngeendlela ezimbini ze-carbothermal nitridation method kwi-nitrogen kwi-1950 ° C ye-8 h (Umfanekiso 5 (d)). U-SHAN et al [69] wabika ukuba zombini i-bimodal (~ 1.1 μm kunye ne ~ 2.2 μm) kunye ne-unimodal (~ 1.1 μm) i-AlON powders inokufumaneka ngokusebenzisa i-ball mill ye-AlON powder elungiselelwe ngendlela ye-CRN ( Amakhiwane 5(e) kunye (f)). Baye bafumanisa ukuba i-AlON powder ene-bimodal particle size distribution (PSD) inoxinano olukhawulezayo ngexesha lenkqubo ye-sintering, kunye ne-AlON ceramics ecacileyo ebalaseleyo ukuya kuthi ga kwi-82.1% ye-infrared transmittance kwi- ~ 3600 nm yayingenaxinzelelo kwi-nitrogen kwi-1820 °C ye-2.5 h (Umfanekiso 5(g))


Umzobo5

UMZEKELO 5

I-powder ecocekileyo kunye necocekileyo ye-γ-AlON ilungiswe ngempumelelo ngu-YUAN et al [70] ngendlela yokudibanisa (Imifanekiso 6 (a) kunye (b)). Baphinde basebenzise i-γ-AlON powders ukuvelisa i-AlON ceramics kwaye bafunda umphumo we-lamellas yamawele kumandla abo omatshini (Imifanekiso 6 (c-j)) [71]. Bafumanisa ukuba i-lamellas ezimbini kunye nemida iphakama ngokunyuka komyinge wobungakanani bengqolowa kwii-ceramics ze-AlON ezinkulu, ezibonelela ngendlela ethembisayo yokuphucula i-ceramics ecacileyo kunye neenkozo ezinkulu. 

Ukuza kuthi ga ngoku, zikho nezinye iindlela eziphononongweyo ukwenza umgubo weAlON okanye iiseramikhi. Ngokomzekelo, i-ASPAR et al [62] ilungiselele i-AlON ikhompawundi isebenzisa i-ammonia, i-trimethyl-aluminium, kunye ne-nitrous oxide nge-deposition ye-chemical vapor.I-CVD) indlela. Kwafunyaniswa ukuba iqondo lokushisa kunye noxinzelelo lunefuthe elibalulekileyo kwiingqungquthela zokulingana ngokuguqula ubuninzi be-CO ekhoyo. U-IRENE et al [21] naye wasebenzisa indlela ye-CVD ukuvelisa iifilimu ze-AlxOyNz kwi-silicon. Okubalulekileyo, isigaba sinokulawulwa ngokulungelelanisa umlinganiselo we-NH₃ / CO₂ igesi kunye nobushushu bokulungiselela i-KIM et al [72] iphuhlise iqondo lokushisa eliphantsi-i-gel esekelwe kwindlela yokufumana inkqubo ye-Al-ON, nangona kunokuba nzima ukuyiphatha. i-nitride precursor ye-hydrazine kule nkqubo. Ezinye ii-agent ze-nitriding zaphononongwa kuphando lwazo olongezelelweyo. I-KIKKAWA et al [73] yenziwe i-AlON nge-ammonia nitridation ye-oxide precursor, eyaveliswa nge-peptizing i-glycine gel kunye ne-aluminiyam nitrate. Ukongeza, i-plasma reactor yenzelwe ukudibanisa i-AlON nanopowders ngokuhambelana ne-Al powder kunye ne-ammonia kunye nomoya kwi-plasma ye-nitrogen eshushu [74] Isigaba, iikhemikhali, kunye nokuchithwa kweengqungquthela ze-nano- powders ezilungisiweyo zihambelana iiparamitha zenkqubo yeplasma kunye noyilo lwereactor.

Ukufumana ii-ceramics ze-AlON eziphezulu ezicacileyo, izongezo ze-sintering kufuneka zongezwe ukuphelisa ii-pores ezishiyekileyo ngexesha lokucoca, okuyiziko lokusabalalisa ukukhanya. Kule mihla, izongezo ezahlukeneyo ze-sintering ze-AlON, ezinje ngeY₂O₃, La₂O₃, MgO, SiO₂, kunye neCaCO₃, ziphandwe ngokubanzi [67−69,75−80]. Ngokweentlobo zezongezo ze-sintering, sishwankathele iziphumo ezicacileyo eziqhelekileyo ze-AlON Ceramics kunye nezongezo ezahlukeneyo ze-sintering, njengoko kubonisiwe kwiThebhile 2. mm ubukhulu) yi-69% kumgama wamaza we-3 nm kunye ne-82.1 wt.% Y₂O₃. I-SiO₂ yaqalwa okokuqala njenge-sintering additive ye-AlON ceramic (Umfanekiso 3600 (b)) [0.5]. Baye bafumanisa ukuba i-in-line transmittance ye-AlON ceramic ifikelela kwi-7% (76 mm ubukhulu) kwi-86 nm kwaye ayikhathaleli kwi-additive concentration kunye ne-3.5−2000 wt.% SiO0.15. Abanye abaphandi basebenzise iindidi ezimbini zezongezo ze-sinteri ukuvelisa ii-ceramics ze-AlON ezicacileyo. I-WANG et al [0.55] isebenzise i-2wt.% Y₂O−81wt.% La₂O₃ njengezongezo ezidibeneyo ze-AlON ceramics, ukufumana ukuhanjiswa kwe-0.12% (0.09 mm ubukhulu) kwi-80.3 nm (Fig. 2(a)) . Baxela ukuba i-Y₃ + kunye neLa₃ + inefuthe le-synergistic ekukhuleni okuziinkozo kunye neY₃ + ekuphuculeni ukuhamba komda wengqolowa kunye nokukhuthaza ukukhula okuziinkozo ngelixa iLa₃ + inqanda ukukhula kwengqolowa. I-JIN et al [400] i-sintered AlON ceramics isebenzisa iindidi ezintathu zezongezelelo ze-sintering ngaphandle koxinzelelo, ihlanganiswe ngu-7 wt.% MgO, 68 wt.% Y₂O₃, kunye ne-0.1 wt.% La₂O₃, kwaye iphumelele ukuhanjiswa kwe-0.08% ye-0.025% ubukhulu) kwi-81 nm. Kutshanje, i-Y₂O₃−La₂O₃− MnO njengento edityanisiweyo yokongeza i-sintering ukwenza iiseramikhi ze-AlON ezingafihliyo zaphandwa nguWANG et al [1] (Fig. 1100(d)). Imida ye-solubility yezongezo ze-sintering e-AlON yaphononongwa ngu-MILLER kunye ne-KAPLAN [81] kusetyenziswa i-wavelengthdispersive spectroscopy efakwe kwi-microscope ye-electron yokuskena. Baye bafumanisa ukuba imida yokunyibilika kweLa, Y, kunye neMg kwi-AlON kwi-7 ° C yayi (82 ± 1870) × 498−82, (10 ± 6) × 1775−128, kunye > 10 × 6−4000, ngokulandelanayo. 


Umzobo7

UMZEKELO 6

Ukongeza kwizongezo ze-sintering zesiqhelo ze-Y₂O₃, i-La₂O₃, kunye ne-MgO, izongezo ezintsha ze-sintering ze-H₃BO₃ ezisekelwe kwi-ternary composite [34] kunye nezinto zomhlaba [35] nazo zaphandwa. Njengoko kubonisiwe kumakhiwane. I-8(a) kunye no-(b), izinto ezahlukeneyo zomhlaba ezinqabileyo (Sc, La, Pr, Sm, Gd, Dy, Er, kunye ne-Yb) zajongwa ngokucwangcisiweyo njengesongezo sokuntywila kwiiseramikhi zeAlON ezikhanyelayo, ngokulandelelanayo. Kwafunyaniswa ukuba iiseramikhi ze-AlON ezine-0.1 wt.% I-Pr-nitrate ibonise ukuhanjiswa okuphezulu kwe- ~ 80% ngamanyathelo amabini oxinzelelo lwe-sintering (umzobo 8(c)), ebonisa ukuba izinto ezinqabileyo zomhlaba zinokuba yindlela ethembisayo yokuntywila. ukongeza. Kutshanje, usebenzisa i-Y₂O₃−MgAl₂O₄−H₃BO₃ njenge-co-sintering additive, i-YANG et al [34] ifumene i-AlON ceramic kunye nokuhanjiswa kwe-81% (4 mm ubukhulu) kwi-600 nm ngenyathelo elinye elisebenzayo xa i-H₃₃ umxholo wawuyi-0.12 wt.%. (Umfanekiso 8(d)). 


Umzobo8

UMZEKELO 7


      Itheyibhile yesi-2 iziphumo ezicacileyo zeeramics ze-AlON ezinezongezo ezahlukeneyo zokudibanisa

Uhlobo lwe-sintering additiveY₂O₃ umxholo/wt.%La₂O₃ umxholo/wt.%Umxholo we-MgO/ wt.%SiO₂ umxholo/ wt.%CaCO₃ umxholo/ wt.%Ubude bobude/nmUgqithiso/%Ubukhulu / mmRef.
1



I-0.15 − 0.55
2000863.5[76]




0.43700853[79]
0.5



370084.31[67]
0.5



360082.13[69]

0.02


110074.64.2[75]
20.120.09


40080.32[80]
0.4
0.25

200086.11[78]
0.05
0.2

2000841.5[77]
30.080.0250.1

1100811[68]


Ngaphambi kokutshisa, iipelisi eziluhlaza ze-AlON powders zivame ukubunjwa yinkqubo eyomileyo, kuquka i-uniaxial press phantsi koxinzelelo kunye ne-cold isostatic press, okanye ngenkqubo emanzi, kuquka i-gel-casting [8,63,83]. Uninzi lwetekhnoloji ye-sintering iye yaphononongwa ukulungiselela i-AlON ceramics, njenge-sintering engenaxinzelelo [56,58,67,68,77,79], i-vacuum sintering [65], i-hot-press [84], i-microwave sintering [85,86], I-spark plasma sintering [87-89] kunye nokucinezela kwe-isostatic eshushu [75,76,78,90,91]. Iingenelo kunye nokungalunganga kweendlela zokulungiselela eziqhelekileyo ze-AlON ceramic ziboniswe kwiThebhile 3. I-Sintering Pressureless sintering yeyona teknoloji ye-sintering yendabuko kwaye inexabiso elisebenzayo kwimveliso yobuninzi beekeramics ze-AlON ezinobungakanani obahlukeneyo kunye neemilo. Nangona kunjalo, ubushushu obuphezulu be-sintering, ixesha elide le-sintering, kunye nezongezo ze-sintering ziyafuneka ngokubanzi ukuze ufumane ii-ceramics ze-AlON ezingafihliyo. I-LI et al [67] ibike inani le-arge ye-alON ye-ceramics ecacileyo kunye nemilinganiselo ye-d100 mm × 1 mm ngoxinzelelo olungenaxinzelelo kwi-1950 ° C ye-12 h phantsi kwe-atmospheric ye-N2 ejikelezayo kwisithando somlilo segraphite. I-in-line transmittance ye-AlON ceramic (1 mm ubukhulu) yi-84.3% kwi-3.7 μm ubude be-wavelength kunye ne-0.5 wt.% Y₂O₃. I-vacuum sintering yitekhnoloji ye-sintering esebenzayo yokuphelisa irhasi kwiiseramikhi [92]. I-PATEL et al isebenzise i-high-purity Al65O2 kunye ne-AlN amandla njengezinto ezibonakalayo zokwenza i-AlON ceramics e-translucent kwi-3 ° C ye-2000 h kunye ne-8 MPa yoxinzelelo phantsi kwe-hot-press, ilandela kwi-32 ° C ngaphezu kwe-1900. h kwindawo engenanto. I-Hot-press (HP) i-sintering ingaqashwa ukufaka uxinzelelo lwe-axial ukukhawulezisa ukuhamba kwamagunya kunye nokwenza i-pellet eluhlaza ixinene ngokupheleleyo kwiqondo lobushushu eliphantsi. Kodwa i-HP sintering ayifanelekanga ukulungiselela iisampulu ezinkulu kunye nezintsonkothileyo, kwaye imveliso ineendleko eziphezulu, kwaye ukungcola kunye neziphene zinokungeniswa ngokungenakuphikiswa. Inkqubo yasemva kwe-annealing iyafuneka ukususa ukungcoliseka kwekhabhoni [8]. I-TAKEDA kunye ne-HOSAKA [8] ifumene i-ceramic ecacileyo ye-λ-AlON kwi-84 ° C ye-1900 h kunye ne-1 MPa yoxinzelelo phantsi kwe-hot-press. I-Microwave sintering inokusebenza kakuhle kwamandla, ukonga iindleko, ubushushu obuphantsi be-sintering, ukusabela okomeleziweyo, kunye nezinga le-sintering. Kwinkqubo ye-microwave, amandla e-microwave aguqulwayo anokufudumeza ngaphakathi kwesampulu yevolumu ngokwayo. U-CHENG et al [85] ucaphukile ukuba i-AlON i-sintered kwi-1800 °C kwi-1 h ngexesha lenkqubo ye-microwave inokuhanjiswa okupheleleyo kwe-60%. I-Spark plasma sintering (SPS), ekwabizwa ngokuba yi-pulsed electric current sintering, inokubona iiseramikhi ezishinyeneyo ezibonisa ngokucacileyo ngeenkozo ezintle ngenxa yexesha elifutshane lokutshisa kunye nobushushu obuphantsi ngoncedo lwe-DC epholileyo phantsi koxinzelelo. Ngoko ke, ukukhula kweenkozo kunokuncitshiswa. U-SHAN et al [87] uvelise ii-ceramics ze-AlON eziphezulu ezicacileyo nge-SPS kwiqondo lokushisa eliphantsi le-1600 ° C kunye namazinga okufudumala okukhawuleza kwe-50-250 ° C / min phantsi koxinzelelo lwe-60 MPa. Ukuhanjiswa okuphezulu kwe-AlON ceramics efunyenweyo (1.4 mm ubukhulu) yi-80.6%. 


Umzobo8

UMZEKELO 8


Itheyibhile 3 Izinto eziluncedo kunye nokungonakali kweendlela zokulungiselela eziqhelekileyo ze-AlON ceramic

Indlela yokulungiselelauncedoNgengozi
Sintering ngaphandle koxinzeleloInkqubo elula, efanelekileyo ukulungiselela iisampulu ezinkulu kunye nezintsonkothileyo, imfuneko ephantsi kwisixhobo, kunye nemveliso ephezuluUkusebenza kwamandla aphantsi, kunye nexesha elide le-sintering
Vacuum sinteringInkqubo elula, efanelekileyo ukulungiselela iisampulu ezinkulu kunye nezintsonkothileyo, imfuneko ephantsi kwisixhobo, kunye nemveliso ephezuluUkusebenza kwamandla aphantsi, kunye nexesha elide le-sintering
Intlantsi yeplasma sinteringUkusebenza kwamandla aphezulu, ubushushu obuphantsi be-sintering, ixesha elifutshane lokutshiza, kunye nokonga iindlekoAyifanelekanga ukulungiselela iisampulu ezinkulu nezintsonkothileyo, imfuneko ephezulu kwisixhobo, kunye nemveliso ephantsi
I-microwave sinteringUkusebenza kwamandla aphezulu, ubushushu obuphantsi be-sintering, ixesha elifutshane lokutshiza, kunye nokonga iindlekoAyifanelekanga ukulungiselela iisampulu ezinkulu nezintsonkothileyo, imfuneko ephezulu kwisixhobo, kunye nemveliso ephantsi
I-Hot-press sinteringUkuhanjiswa okuphezulu, ukuxinana okuphezulu, kunye neepores ezishiyekileyo ezisezantsiAyifanelekanga ukulungiselela iisampulu ezinkulu nezintsonkothileyo, imfuneko ephezulu kwisixhobo, imveliso ephantsi, inkqubo entsonkothileyo, kunye neendleko eziphezulu
Ucinezelo olushushu lwe-isostaticUkuhanjiswa okuphezulu, ukuxinana okuphezulu, kunye neepores ezishiyekileyo ezisezantsiAyifanelekanga ukulungiselela iisampulu ezinkulu nezintsonkothileyo, Imfuneko ephezulu kwisixhobo, imveliso ephantsi, inkqubo entsonkothileyo, kunye neendleko eziphezulu


 Ucinezelo olushushu lwe-isostatic (IHIP) yeyona teknoloji ye-sintering enamandla kakhulu ukufezekisa ubuninzi bobuninzi kunye ne-high-end optical transmitting optical transmittings ekugqibeleni ukunciphisa ii-pores ezishiyekileyo kwi-ceramics [8,11,93,94]. Ngexesha lobushushu obuphezulu be-sintering, izixhobo ze-HIP zingasetyenziswa ngoxinzelelo lwegesi ye-isostatic. Umzobo we-9 ubonisa umzobo weskimu semodeli ye-microstructure yokupheliswa kwe-pore yi-HIP [8,95]. Ngokuqhelekileyo, kunzima kakhulu ukuphelisa ii-pores ezishiyekileyo ngezinye itekhnoloji ye-sintering. Inkqubo eyongezelelweyo ye-HIP iyadingeka ukuphelisa ii-pores ezishiyekileyo kunye nokwandisa ubuninzi kunye nokuhanjiswa ngokusondeleyo kwixabiso lethiyori. 


Umzobo9

UMZEKELO 9


Lo msebenzi wawuxhaswa yi-Jiangxi Provincial Natural Science Foundation, e-China (No. 20192BAB216009), iProjekthi yoCwangciso lweSayensi kunye neTekhnoloji yePhondo laseHunan, eChina (No. 2019WK2051), kunye neProjekthi yeSayensi kunye neTekhnoloji yaseChangsha, eHunan, eChina (No. kh2003023).






Indawo
ACME Xingsha Industrial Park, East Liangtang Rd. , Changsha City, Hunan
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Ngathi

Yasekwa ngo-1999, i-ACME (i-Advanced Corporation ye-Materials & Equipments) ifumaneka kwi-Xingsha Industrial Park, kunye nommandla we-100,000 m2. I-ACME lishishini lobugcisa obuphezulu obukhethekileyo ekwenzeni izixhobo zokufudumeza kwishishini lezinto ezintsha kunye namandla.Umthetho wabucala | Migaqo nemiqathango

Qhagamshelana nathi
IQumrhu eliPhezulu leMathiriyeli & neZixhobo| Imephu yesiza