დაი იუ, ACME-ს თავმჯდომარე, მიწვეული იყო ახალი ნახშირბადის მასალების ეროვნულ სიმპოზიუმზე დასასწრებად და აკადემიური მოხსენების გასაკეთებლად.
On August 14-16, 2023, the 16th National Symposium on New Carbon Materials was held in Taiyuan, Shanxi Province. The symposium was hosted by Shanxi Institute of Coal Chemistry, Chinese Academy of Sciences and Shanxi Association of Science and Technology, and was attended by more than 400 representatives from universities, research institutes and enterprises across the country. The conference is a representative academic exchange conference in the field of carbon materials in China and is held every two years.
The conference set up three sub-sessions with the theme of "Carbon fiber, graphite and carbon-based composites", "Nanocarbon, porous carbon and structural characterization of carbon materials", and "Application of carbon materials in electrical energy storage and structural regulation", compiled a total of 212 research paper abstracts, and gathered the latest research results of China's new carbon materials research and development.
Dr. Dai Yu, Chairman of ACME, was invited to attend the conference and gave an academic report entitled "Technical Status and Prospects of" Four High and Two Coats "carbon-based Materials for third-generation semiconductors. The report describes the application status of third-generation semiconductor materials at home and abroad, analysis of the reasons for the gap between domestic silicon carbide single crystals and foreign countries, and the progress made by ACME in the research of "four high and two coats" carbon-based materials (namely high purity carbon powder, high purity silicon carbide powder, high purity graphite, high purity hard felt, silicon carbide coating, tantalum carbide coating).
The ultra-high temperature purification equipment independently developed by ACME adopts a unique composite high temperature thermochemical purification process, which breaks through the removal technology of high purity carbon powder trace impurities, and the product purity can reach more than 6N; The self-developed chemical vapor deposition equipment has broken through the key technology of TaC coating preparation, and its product performance has reached the international advanced level, realizing the independent control and industrialization of the key materials and equipment for the third generation of semiconductors.